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characteristics of the metal semiconductor Schottky junction formed by... | Download Scientific Diagram
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The energy band diagram of a metal and n-type semiconductor junction in... | Download Scientific Diagram
![2-1. Schottky contact (Schottky junction) Φ<sub>m</sub> > Φ<sub>n</sub> | Toshiba Electronic Devices & Storage Corporation | Americas – United States 2-1. Schottky contact (Schottky junction) Φ<sub>m</sub> > Φ<sub>n</sub> | Toshiba Electronic Devices & Storage Corporation | Americas – United States](https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/knowledge/e-learning/basics-of-schottky-barrier-diodes/chap2-2-1_en.png)
2-1. Schottky contact (Schottky junction) Φ<sub>m</sub> > Φ<sub>n</sub> | Toshiba Electronic Devices & Storage Corporation | Americas – United States
![SOLVED:(a) Consider a metal-semiconductor junction formed between a metal with a work function of 4.65 eV and Ge with an electron affinity of 4.13 eV. The doping concentration in the Ge material SOLVED:(a) Consider a metal-semiconductor junction formed between a metal with a work function of 4.65 eV and Ge with an electron affinity of 4.13 eV. The doping concentration in the Ge material](https://cdn.numerade.com/previews/ee194821-9dcc-4944-9b60-3399c3398372.gif)
SOLVED:(a) Consider a metal-semiconductor junction formed between a metal with a work function of 4.65 eV and Ge with an electron affinity of 4.13 eV. The doping concentration in the Ge material
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