PowerUP EXPO 2021: Fundamentals of GaN and SiC power devices
Si vs. GaN vs. SiC: Which process and supplier are best for my power design? - EDN
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN® FET Family | Business Wire
GaN | Nexperia
GaNの歩留まり90%や、耐圧1200Vの縦型構造など新GaNパワーFET - セミコンポータル
GaN FETの特性：GaNパワー半導体入門（2）（1/4 ページ） - EDN Japan
GaN power devices, Part 1: Principles
業界最小の＋100V耐圧GaN FET、EPCがサーバー向け | 日経クロステック（xTECH）
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
新しい耐圧200 VのeGaNデバイスは、成熟したシリコン・パワーMOSFETに比べて性能が2倍です
Increasing gallium nitride MOSFET threshold voltage
GaN power devices: Perfecting the vertical architecture - News
How GaN FETs Have Become the Technology of Choice for Audiophiles - Technical Articles
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
SiCおよびGaN半導体 | DigiKey
Cross-sectional schematic of normally-off GaN MOSFET with p-GaN... | Download Scientific Diagram
Color online Cross section of the fabricated GaN MOSFET and MOS-HEMT. | Download Scientific Diagram
Model for Gate Capacitance of trench GaN Mosfet
High-speed GaN FET driver switches at 40 MHz - Power Electronic Tips
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
量産対応で、最大10kWのアプリケーションを サポートする600V GaN FET製品ポートフォリオを発表 | news.tij.co.jp
GaN FET vs. MOSFET: 150 V – 12 V DC-DC Conversion - YouTube
